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| hexfet power mosfet notes through are on page 10 applications synchronous mosfet for notebook processor power synchronous rectifier mosfet for isolated dc-dc converters in networking systems top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 50 -55 to + 155 2.5 0.02 1.6 max. 20 16 160 20 30 form quantity tube/bulk 95 IRF7832PBF-1 tape and reel 4000 irf7832trpbf-1 package type standard pack orderable part number IRF7832PBF-1 so-8 base part number features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 10v) 4.0 q g (typical) 34 nc i d (@t a = 25c) 20 a m ! ! s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? () ??? 3.7 4.8 v gs(th) gate threshold voltage 1.39 ??? 2.32 v () a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 77 ??? ??? s q g total gate charge ??? 34 51 q gs1 pre-vth gate-to-source charge ??? 8.6 ??? q gs2 post-vth gate-to-source charge ??? 2.9 ??? nc q gd gate-to-drain charge ??? 12 ??? q godr gate charge overdrive ??? 10.5 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 14.9 ??? q oss output charge ??? 23 ??? nc r g gate resistance ??? 1.2 2.4 () () avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 160 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 41 62 ns q rr reverse recovery charge ??? 39 59 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? i d = 16a v gs = 0v v ds = 15v v gs = 4.5v, i d = 16a v gs = 4.5v typ. ??? v ds = v gs , i d = 250 a clamped inductive load v ds = 15v, i d = 16a v ds = 24v, v gs = 0v, t j = 125c t j = 25c, i f = 16a, v dd = 10v di/dt = 100a/ s t j = 25c, i s = 16a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 16a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 20a conditions max. 260 16 ? = 1.0mhz ! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20 s pulse width tj = 25c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20 s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j, junction temperature (c ) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 16a v gs = 4.5v " ! fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g total gate charge (nc) 0 1 2 3 4 5 6 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 16a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100 sec # ! fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 20 24 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature (c) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a $ ! fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.0a 13a bottom 16a fig 16. switching time test circuit fig 17. switching time waveforms fig 12. on-resistance vs. gate voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15. gate charge test circuit fig 14. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v vgs v gs pulse width < 1 s duty factor < 0.1% v dd v ds l d d.u.t + - v gs v ds 90% 10% t d(on) t d(off) t r t f 2 3 4 5 6 7 8 9 10 v gs , gate -to -source voltage (v) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 125c t j = 25c % ! fig 18. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period & '#& ( ) ( + - + + + - - - & ? ? ! "#"" ? $ % % ? "#""& # fig 19. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr * ! control fet !"# $ % &'!"# $ $( p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) ( ) + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? # ) &'!"# &'!"# # ! * $ + & , &'!"# $ $ ! - $ . / 0 $ $ synchronous fet the power loss equation for q2 is approximated by; p loss = + + = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic + ! so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 b asic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ! repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.0mh, r g = 25 , i as = 16a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ |
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